Guangzhou Guangya Messe Frankfurt Co Ltd. (Ed.)

PCIM Asia 2023

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 29 – 31 August 2023, Shanghai, China

2023, 392 pages, 140 x 124 mm, Slimlinebox, CD-Rom
ISBN 978-3-8007-6131-9, e-book: ISBN 978-3-8007-6132-6
Personal VDE Members are entitled to a 10% discount on this title

Content Foreword

The PCIM Asia Conference brings together the world´s foremost experts and decision maker from industry and academia in the field of power electronic components and systems to discuss future technology trends and launching new products in the market. Power electronic components and energy conversion systems today are driven by WBG technologies, the electrification of all transportation vehicles, renewable energy technologies, communication equipment and artificial intelligence. WBG devices gives a new freedom in the design of ultra-high power density converters along with high efficiency ratings. Researchers from academia and experts from industry will provide presentations covering new developments in the field of power devices, advanced packaging technologies with outstanding reliability, future power converters for automotive and renewable energy systems. This year in our technical program we are covering innovations along the power electronic roadmap in addition to three leading experts for keynote presentations, one special session on GaN based high power density supplies and one tutorial on advanced power modules. The PCIM Asia is a worldwide magnet for design engineers and researchers in the field of power electronics as well as decision makers from companies to generate new market segments and trigger future research directions.
Guangzhou Guangya Messe Frankfurt Co., Ltd – one of the world's three major exhibitions in Frankfurt Exhibition Co., Ltd. and Guangzhou and set up the first and strongest one of the private exhibition in Guangzhou Guangya Exhibition Trade Co., Ltd. was jointly established in 2005, is the first Sino-foreign cooperation in Guangzhou Exhibition Corporation. Guangya Messe Frankfurt in order to build China's international brand exhibition as their responsibility to become the world's leading exhibition companies.
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A Snapback-Free Reverse-Conducting LIGBT with P floating region at Collector

Authors:
Wang, Cai-Lin; Du, Wan-Ting; Yang, Wu-Hua; Zhang, Chao

3

Accurate Switching Behavior Modeling for SiC MOSFETs Considering Dynamic Output Characteristics

Authors:
Zhou, Yimin; Wang, Zhiqiang; Yang, Yayong; Xin, Guoqing; Shi, Xiaojie; Kang, Yong

4

More than an Evolution: a New Power MOSFET Technology for Higher Efficiency of Power Supplies

Authors:
Song, Owen; Siemieniec, Ralf; Mazzer, Simone; Braz, Cesar; Noebauer, Gerhard; Hutzler, Michael; Laforet, David; Pree, Elias; Ferrara, Alessandro

5

Modeling and Validation of a Silicon-Carbide Power Module

Authors:
Zhang, Leon (Lizhen); Cho, Dylan; Paul, Roveendra; Victory, James; Tian, Bo

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7

Analysis of Input Current Distortion in Three-phase Current Source PWM Rectifier

Authors:
Li, Binghui; Zhou, Shuhan; He, Mingzhi; Zhang, Yanzi; Liu, Gao

8

A Trench Gate Reverse-Conducting IGBT with a Shallow Oxide Trench and a Floating P-Region

Authors:
Wang, Cai-Lin; Cheng, Rong-Hua; Yang, Wu-Hua; Zhang, Ru-Liang

9

The Research on Influencing Factors of 650V IGBT’s Turn-off dVce/dt Controllability

Authors:
Li, Rui; Ma, Keqiang; Wang, Siliang; Xiang, Yi; Liu, Liangkai; Yang, Ke

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11

Driver Optimization Method Based on GeneticAlgorithm for IGBT

Authors:
Lin, Chengyang; Ma, Mingcheng; Sun, Tianlin; Xu, Dianguo

12

A Variable Bypass Current Source Driver Circuit Based on Reference Voltage

Authors:
Ma, Mingcheng; Lin, Chengyang; Sun, Tianlin; Xu, Dianguo

13

Research on the Full Temperature Range Characteristics of IGBT

Authors:
Sun, Tianlin; Lin, Chengyang; Ma, Mingcheng; Xu, Dianguo

14

Gate oxide degradation of SiC IGBT induced by non-constant thermal-electrical coupled stresses

Authors:
Luo, Rongde; Yang, Shaodong; Luo, Xia; Niu, Hao; Kuang, Xianjun; Xu, Xiaowei; Dong, Huafeng; Dai, Zongbei; Wu, Fugen

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16

A New Parameter-free Predictive Current Control for PMSM

Authors:
Zhang, Guofu; Zhang, Xiaoguang

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19

Derivation Of DC Servo Driver Current Loop Model

Authors:
Han, Bin; Qiu, Jing; Yang, Ming

20

Self-tuning Technique of PMSM Current Loop Based on Active Damping

Authors:
Qiu, Jing; Song, Yuchen; Yang, Ming

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Development of the control algorithm for the two-unit fast-charging stations

Authors:
Volskiy, Nikolay; Krapivnoi, Mikhail; Barkovska, Darja

24

Panoramic co-simulation technology for large-scale offshore wind power

Authors:
Zhang, Junyang; Guo, Xiaojiang; Li, Zheng

25

A Cooperative Control Strategy for AC Fault Ride Through of Offshore Wind Power Based on AC Voltage Fluctuation

Authors:
Li, Chunhua; Yijing, Chen; Guo, Xiaojiang; Shen, Xuhui; Xu, Sun

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2.3kV Si and SiC devices development for renewable energy system

Authors:
Chen, Shuangching; Sekino, Yusuke; Takaku, Taku; Okumura, Keiji; Uchida, Takafumi; Mitsuzuka, Kaname; Onozawa, Yuichi; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki; Song, Chen

27

Wide Bandgap Semiconductor – a foundry perspective

Authors:
Wei, Heming; Jahnke, Agnes

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29

Implantation optimization for 1200 V SiC MPS with ultra-low leakage current and high surge current capability

Authors:
Yi, Bo; Xu, Yi; Ma, KeQiang; Wang, SiLiang; Cheng, JunJi; Yang, HongQiang; Jiang, Xingli; Hu, Qiang

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31

A Control Strategy Enabling Compatible 1-Ph/3-Ph V2L Operations for EV Chargers with Improved Leg Utilizations

Authors:
Chen, Peng; Yuan, Ziheng; Wu, Zhouyu; Wu, Wei; Li, Helong; Yang, Zhiqing; Zhao, Shuang; Yu, Zixiang; Ding, Lijian; Wang, Lijun; Huo, Wei

32

3MHz GaN DC-DC 48Vin direct to 0.6Vout realized by ultra-short pulse(5ns) using Virtual Peak Current Mode control technique

Authors:
Takobe, Isao; Yamashita, Hiroshi; Otani, Junki; Kawano, Akihiro; Zaitsu, Toshiyuki

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34

A four-chip parallel IGBT module based on the latest generation technology used in Photovoltaic Centralized Inverter

Authors:
Tao, Zhang; Xuanxuan, Wang; Rui, Rong; Shuai, Cao; Shuo, Miao; Guokang, Chen

35

Low loss and High-cooling-performance automotive power module for 160 kW EV application

Authors:
Ebuchi, Yoshihisa; Shimada, Naoya; Kawakami, Yoshihiko; Seki, Youichirou; Watanabe, Manabu; Yoshida, Souichi; Takeuchi, Yuuta; Tateishi, Yoshihiro

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New Generation 750V IGBT modules for automotive application

Authors:
Liu, Zhihong; Tang, Yi; Yan, Jinchun; Yong, Fu; Zheng, Songlin; Ma, Jiajie; Chen, Ye; Ling, Xi; Yao, Lijun

38

Thermal model of fully-molded, multi-chip power modules

Authors:
Young, Sungmo; Lee, Taejin; Kwon, Hyukdong

39

Introduction of RC-IGBT Based Transfer Mold SOPIPM(TM)

Authors:
Wang, Xiaoling; Chen, Jian; Goto, Akiko

40

30A/600V RC-IGBT Based Transfer Molded IPM for Home Appliance Application

Authors:
Kai, Jiang; Joko, Motonobu; Huang, HongGuang

41

An 820A 750V IGBT Module with Excellent Performance for Inverter of Electric Vehicle

Authors:
Miao, Shuo; Rong, Rui; Chen, Chao; Zhang, Tao; Cao, Shuai; Chen, Guokang; Meng, Yadong

42

3-level T-type 4-in-1 Module for Active Front End Solution

Authors:
Murakami, Haruki; Nishida, Nobuya; Lu, Siqing; Zhang, Yuancheng

43

Study on Microstructure and Mechanical Properties of Copper-Copper Bonding by Ultrasonic Welding

Authors:
Pang, Xiaofei; Zhang, Xiankun; Zhang, Xiaodong; Zhang, Jianning

44

Study on harmonic response of wirebond in high power IGBT module under ultrasonic welding process

Authors:
Li, Xingfeng; Huang, Jianxin; Luo, Zhangzhen; Chang, Guiqin; Shi, Tinchang; Luo, Haihui; Xiao, Qiang

45

Optimization of Pinfin Heat Sink for SiC Power Module based on LBM-LES

Authors:
Cui, Jian; Ning, Puqi; Hui, Xiaoshuang

46

An Accurate 3D Thermal Simulation Method Based on Neural Network-Aided Power Loss Model

Authors:
Yang, Yayong; Wang, Zhiqiang; Zhou, Yimin; Xin, Guoqing; Shi, Xiaojie; Kang, Yong

47

Research on the improvement of IGBT module surge capability

Authors:
Chang, Guiqin; Zou, Xi; Fang, Chao; Luo, Haihui; Xiao, Qiang; Wang, Yangang

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49

Low-Loss Molding Inductor analysis

Authors:
Tsuo, Kunming; Wiest, David

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51

Method of avoiding plastic IGBT module’s torque loss in harsh application environment

Authors:
Cao, Shuai; Chen, Chao; Rong, Rui; Zhang, Tao; Miao, Shuo

52

Comprehensive Loss and Thermal Performance Analysis of Three-level T-type Grid-connected Converters

Authors:
Han, Liangliang; Wu, Wei; Zhang, Man; Li, Helong; Yang, Zhiqing; Zhao, Shuang; Ding, Lijian; Deng, Shuai; Li, Zhenyang

53

Gate Circuit improves p-GaN HEMT VTH reliability

Authors:
Liu, Xinke; Chen, Zengfa; Zhong, Ze; Zhang, Qiyan; Li, Xiaobo; Qiu, Feng; Xu, Yong; Zhuang, Wenrong; Chen, Longkou; Huang, Shuangwu; Gao, Linfei

54

Distributed Real-Time Simulation System for Power Converter-Dominated Grid

Authors:
Cao, Zhiyu; Zhang, Peilin; Cao, Yilong; Cui, Haoyang

55

The MMC Based DC Transformer With Reshaped Circulating Current

Authors:
Hou, Wenlong; Zhao, Xiaodong; Li, Binbin; Xu, Dianguo

56

New generation high power semiconductors for 8GW VSC-HVDC applications

Authors:
Tsyplakov, Evgeny; Gupta, Gaurav; Vobecky, Jan; Jones, Jeremy; Boksteen, B.; Michelis, L. D.; Winter, Christian; Chen, Makan

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58

GaN switches enable high performance architecture for USB-PD EPR Adaptors

Authors:
Ausseresse, Pierrick; Medina-Garcia, Alfredo; Daimer, Josef; Schlenk, Manfred

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