Research on the improvement of IGBT module surge capability
Conference: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/29/2023 - 08/31/2023 at Shanghai, China
doi:10.30420/566131056
Proceedings: PCIM Asia 2023
Pages: 4Language: englishTyp: PDF
Authors:
Chang, Guiqin; Zou, Xi; Fang, Chao; Luo, Haihui; Xiao, Qiang; Wang, Yangang (Zhuzhou CRRC Times Semiconductor Co., Ltd., Zhuzhou, Hunan, China & State Key Laboratory of Power Semiconductor and Integration Technology, Zhuzhou, Hunan, China)
Abstract:
Improving the surge capability of IGBT modules can enhance their adaptability to extreme operating conditions. This article analyzes the characteristics and mechanisms of surge failure in power IGBT modules, and obtains the failure modes of single chip and overall module, respectively. Then, the temperature field distribution of a single chip under different structures were compared through finite element simulation, and it was confirmed by experiments that increasing the number of wirebonds can improve the surge capability of a single chip by 30.4%; Subsequently, current density simulation was conducted on the module, and the results showed that after structural optimization, the overall surge capability of the module increased by 49.1%.