Research on the Full Temperature Range Characteristics of IGBT
Conference: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/29/2023 - 08/31/2023 at Shanghai, China
doi:10.30420/566131015
Proceedings: PCIM Asia 2023
Pages: 7Language: englishTyp: PDF
Authors:
Sun, Tianlin; Lin, Chengyang; Ma, Mingcheng; Xu, Dianguo (Harbin Institute of Technology, China)
Abstract:
IGBT is a commonly used power semiconductor de-vice that is widely used in high voltage, high current, and high frequency power electronic systems. However, the temperature of the IGBT varies significantly during repeated switching, which can affect its electrical characteristics and lead to failure or fatigue effects. To optimize its drive circuit and evaluate the reliability of the IGBT, it is necessary to study its electrical characteristics under working conditions across the entire temperature range and monitor its junction temperature. The junction temperature can be indirectly obtained using the temperature sensitive parameter (TSP) method, and the automatic testing platform proposed in this paper can provide data on various electrical characteristics and status parameters of the IGBT across the entire temperature range, which serves as a reference for the TSP method.