A Snapback-Free Reverse-Conducting LIGBT with P floating region at Collector

Abstract:
A novel snapback-free reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) is proposed in this paper. In which, a P floating region below the n+ short region on the collector side is introduced to prevent electrons from rapidly flowing to the n+ short region and increase the voltage drop between the p+ collector and the N-buffer, thereby suppressing the snapback effect. The static and dynamic characteristics are investigated by TCAD simulator. Compared with the Separated Shorted Anode lateral Insulated Gate Bipolar Transistor (SSA-LIGBT). The proposed structure eliminates the snapback phenomenon at a smaller cell size, and has lower turn-off loss, Eoff, and reverse recovery charge, Qrr, at the same on-state voltage, Von.