A Trench Gate Reverse-Conducting IGBT with a Shallow Oxide Trench and a Floating P-Region
Conference: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/29/2023 - 08/31/2023 at Shanghai, China
doi:10.30420/566131010
Proceedings: PCIM Asia 2023
Pages: 5Language: englishTyp: PDF
Authors:
Wang, Cai-Lin; Cheng, Rong-Hua; Yang, Wu-Hua; Zhang, Ru-Liang (Xi’an University of Technology, China)
Abstract:
A Trench Gate Reverse-Conducting IGBT with a shallow oxide trench and a floating p-region (STFP RC-IGBT) is proposed to suppress the snapback phenomenon during the forward conduction. Take 1700 V RC-IGBT for example, the forward, reverse and short-circuit characteristics are analyzed by simulation. The results show that, compared with the conventional RC-IGBT and TFP RC-IGBT, the snapback-free characteristics can be realized in STFP RC-IGBT by cell size of 32 µm. Furthermore, the turn-off energy loss, Eoff, of IGBT and the reverse recovery peak current density, JRM, of diode are the lowest.