Rubrik: Proceedings - Allgemeine Proceedings
PCIM Asia 2020
größer

Guangzhou Guangya Messe Frankfurt Co Ltd. (Hrsg.)

PCIM Asia 2020

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 16 – 18 November 2020, Shanghai, China

2020, 374 Seiten, 140 x 124 mm, Slimlinebox, CD-Rom
ISBN 978-3-8007-5387-1, E-Book: ISBN 978-3-8007-5388-8
Persönliche VDE-Mitglieder erhalten auf diesen Titel 10% Rabatt

Vorwort

The PCIM is targeting important innovations in the field of power electronics system engineering, the new generation of power devices and packaging technologies. For companies the PCIM is the worldwide leading event to launch new components and power conversion units in the market. Power electronic experts and scientist are presenting their latest research results dur-ing the conference. Decision makers from companies and academia use the PCIM platform to generate new market segments and trigger future research directions. Within the last dec-ade power electronics technology has become the driving forces for many new fields of applications such as all electric transportation systems, future renewable energy technologies and factory automation systems. The PCIM Asia Conference and Exhibition serves as a technical and scientific platform for engineers and researchers engaged in all fields of power electronics starting from power components, power converter technologies, and future smart control systems.
Guangzhou Guangya Messe Frankfurt Co Ltd. (Ed.)
Zur erweiterten Tagungsbeitragssuche
1

Visualization of noise current distribution in power module

Autoren: Funaki, Tsuyoshi; Ibuchi, Takaaki
2

78 W Auxiliary Power Supply for 22-KW Drive Using 1700 V Silicon Carbide MOSFET

Autoren: Wu, Bruce; Shi, Simon
3

Experimental Demonstration of Superior Vf-Err Characteristics of pin Body Diode in 1.2 kV IE-UMOSFET with a Very Short Channel Length

Autoren: Kanamori, Taiga; Aiba, Ruito; Harada, Shinsuke; Yano, Hiroshi; Iwamuro, Noriyuki
4

Active neutral-point-clamped (ANPC) three-level converter for high-power applications with optimized PWM strategy

Autoren: Wang, Heng; Ma, Xin; Sun, Huibo
5

SiC-Based High-Density Charger Pile Power Module Design

Autoren: Ye, Zhong; Han, Qixiang; Yang, Hailong
6

Asymmetrical IGBT design for three-level NPC1 converter in a bidirectional power conversion system

Autoren: Wang, Heng; Zhao, Jia; Yang, Yong
7

Determination of commutation inductance for High-Power Semiconductors on a 3-phase DC-link

Autoren: Giessmann, Andreas; Liu, Xiaoming
8

4500V HiPak IGBT Module rated for 1500A and 150°C for high application

Autoren: Tsyplakov, Evgeny; Andenna, Maxi; Boksteen, Boni; Chen, Makan
9

The Application Benefit of X-series 6.5kV/900A HVIGBT for Rolling Stock

Autoren: Sakai, Junya; Saito, Shota; Hatori, Kenji; Kurachi, Kazuhiro; Hu, Bo; Song, Gaosheng
10

600A/1200V S3+ IGBT Module with Fine Geometry Trench IGBT Technology for EV/HEV Application

Autoren: Xiao, Haibo; Liu, Wei; Yao, Yao; Zhang, Zhonghua; Hu, Wei; Luo, Haihui
11

An Intelligent IGBT Gate Driver IC with Temperature Compensated Gate Side Collector Current Sensing

Autoren: Li, Rophina; Wang, Mengqi; Yu, Jingshu; Zhang, Weijia; Ng, Wai Tung; Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Hiroyuki, Nakajima
12

Optimize the integrated overcurrent protection of gate driver ICs for current sense range extension

Autoren: Preuss, Elisabeth; Eni, Emanuel-Petre; Frank, Wolfgang
13

Using 1200 V three-phase gate driver to drive SiC MOSFETs

Autoren: Song, Jinsheng; Raffo, Diego
14

Foldback Current Limiting Design and Optimization for Hot-Swap and E-Fuse ICs

Autoren: Zhang, Wenjing
15

Operation of a Digitally-Controlled IGBT Gate-Driver with Advance Protection Features During Short-Circuit Type II Conditions

Autoren: Singh, Richa; Fink, Karsten; Hao, Isco Wang
16

Research on Photovoltaic Grid Connected System Based on MMC

Autoren: Yu, Yannan; Yan, Jichi; Shi, Rongliang
17

Study on IMC Growth Behavior during Multiple Reflowing and Thermal Shock Tests of IGBT Module

Autoren: Zhang, XianKun; Fang, Jie; Xu, NingHua; Zeng, Xiong
18

On-State Characteristics Measurement of SiC MOSFET

Autoren: Chai, Xiaoguang; Yuan, Tianshu; Kang, Yuhui; Ning, Puqi; Cao, Han
19

High Power Density Low Loss 3600A/1700V IGBT E2 Module with New Generation IGBT Technology

Autoren: Ning, Xubin; Zhang, Zhonghua; Yuan, Teng; Hui, Wang; Qiang, Xiao; Qin, Rongzhen; Luo, Haihui
20

Turn-off switching loss analysis associated with channel path in Super Junction MOSFET

Autoren: Lee, Geunhyoung; Kang, Soohyun; Kang, Youngjin; Jung, Junhee; Ko, MK
21

Robust buffer layer of 650 V Super-junction MOSFET

Autoren: Kang, Soohyun; Lee, Geunhyoung; Jung, Junhee; Kang, Youngjin; Ko, MK
22

3D-Printed Fluid-Cooler Baseplate for Si-IGBT Modules

Autoren: Buendgen, David; Stippich, Alexander; De Doncker, Rik. W.
23

Cascaded Control of High-Frequency Bidirectional Multi-Phase Boost Converters Implemented on Low-Cost FPGA

Autoren: Sewergin, Alexander; Wienhausen, Arne H.; van der Broeck, Christoph H.; De Doncker, Rik W.
24

New Generation 800-V SUPERFET III MOSFET for High Efficiency and Reliability in Low-Power Applications

Autoren: Kim, Dongwook; Choi, Wonsuk; Kim, Sungnam; Kim, Edward
25

Experimental analysis of the current-carrying capacity of discrete IGBTs in TO-247-based packages

Autoren: Sobe, Klaus; Engl, Lisa; ul Haque, Nauman
26

Balancing the Switching Losses of Paralleled SiC MOSFETs Using an Intelligent Gate Driver

Autoren: Luedecke, Christoph; Krichel, Finn; Laumen, Michael; De Doncker, Rik W.
27

High dV/dt Controllability of 1.2kV TCIGBT through Dynamic Avalanche Elimination

Autoren: Luo, Peng; Ekkanath Madathil, Sankara Narayanan; Nishizawa, Shin-ichi; Saito, Wataru
28

Effect of process and surface metallization on interfacial reaction of siliver sintered joint for power devices

Autoren: Zhang, Haoliang; Fang, Jie; Xu, Ninghua
29

Power Semiconductor Reliability under High Humidity

Autoren: Dan, Zhu
30

Thermal Management for Buck Converters Using Co-Packaged GaN Power HEMTs

Autoren: Deng, Gaoqiang; Zhang, Weijia; Liang, Jingyuan; Li, Rophina; Kim, Namjee; Ng, Wai Tung; Luo, Xiaorong; Fu, Fred
31

Fourth Generation Aluminum Direct Water Cooling Structure with High Reliability for Automotive Electric System

Autoren: Tamai, Yuuta; Danyi, Xiang; Kato, Ryoichi; Gohara, Hiromichi; Yamazaki, Tomoyuki
32

Power Package Attach by Silver Sintering – Process, Performance & Reliability

Autoren: Fenech, Maurizio; Siebenhuhnner, Matthew; Durham, Jeffrey; Susanti, Liliyani; Khaselev, Oscar; Boureghda, Monnir; Joguet, Julien; Wu, Wilson; Dutt, Gyan
33

Advanced Power Module Technologies for Wide Band Gap Devices

Autoren: Liao, Hsueh-Kuo; Chi, Wei-Hao; Huang, Yu-Wen; Chen, Hao-Chih; Hsu, Hao-Chiang; Guo, Siao-Wei
34

Comparison of 3-Level Topologies NPC and ANPC under the Aspect of Low Voltage Ride Through, SiC and Energy Storage Capability

Autoren: Giessmann, Andreas; Spang, Matthias; Schilling, Uwe
35

A DC-link Voltage Estimation Based Active Damping Control Method of Single-phase Reduced DC-link Capacitance Motor Drives

Autoren: Zhao, Nannan; Wang, Gaolin; Li, Binxing; Liu, Shaobo; Xu, Dianguo
36

An integrated servo motor drive with self-cooling design using SiC MOSFETs

Autoren: Wang, Heng; Su, Jianzhong; Du, Jiaxing; Ye, Pan; Su, Zhisheng
37

Research and Application of Solid State DC Circuit Breaker Based on SiC Series and Parallel

Autoren: Qiao, Lifeng; Liu, Teng; Ying, Jianping; Zhang, Dehui
38

Estimation of the Battery Capacity in the Microgrid of a Nearly Zero Energy Building According to the Desired Degree of Energy Autonomy

Autoren: Mademlis, Christos; Jabbour, Nikolaos; Tsioumas, Evangelos; Koseoglou, Markos; Papagiannis, Dimitrios
39

High Power and High Integration Transfer-mold Type IPM

Autoren: Huang, Hongguang; Zhang, Hongbo; Chen, Jian
40

A Half-Bridge LLC Converter Based on Digital Control

Autoren: Liu, Ciqian; Han, Jingang; Song, Jianguo; Tang, Tianhao
41

Simple Constitution Reducing Noise Peak Dc-dc Converter Introducing Advanced Modulation Scheme

Autoren: Hirota, Atsushi; Suyama, Taikei
42

Experiment-based investigation of thermal cross-coupling of chips in high-power IGBT modules

Autoren: Ma, Xin; Sun, Huibo; Wang, Heng; Zhao, Jia; Yang, Yong
43

Design of electric vehicle hybrid power supply discharge control strategy

Autoren: Li, Xiaodong; Meng, Yanjing
44

A low cost and high efficiency gate driver for EV module

Autoren: Zhao, Lizhong; He, Hongtao
45

Optimum Selection of 650-V SUPERFET III MOSFETs for System Efficiency, EMI and Reliability

Autoren: Kim, Sungnam; Choi, Wonsuk; Kim, Dongwook; Kim, Edward
46

Comparison of two types of PR-repetitive control strategies applied to static var generator

Autoren: Ren, Lintao; Shi, Tianling; Wang, Fei
47

Research on security boundary of active power distribution system with distributed energy storage

Autoren: Wen, Chunxue; Xiong, Qi; Li, Jianlin; Zhou, Xichao; Zhou, Jinghua
48

Flexible and General Strategy of Space Vector Modulation for Multilevel Converters

Autoren: dos Santos, Pedro; Vazquez, Mateo; Liu, Steven
49

Technical Cleanliness in Electronics Manufacturing

Autoren: Koevi, Michael; Ji, Jerry
50

Mitigation of IGBT Gate Oscillation during Short Circuit through Module Layout Improvement

Autoren: Ke, Haotao; Teng, Yuan; Qin, Guangyuan; Feng, Huiyu; Yu, Wei; Peng, Yongdian; Tang, Longgu
51

Numerical and Experimental Study on Improving the Surge Current Capability of IGBT Power Modules

Autoren: Ke, Haotao; Deng, Yueping; Wu, Yibo; Fang, Jie; Yu, Wei; Chang, Guiqin; Peng, Yongdian
52

Hardware-in-Loop Simulation of Real-Time Cyber-Physical System for DC Microgrids

Autoren: Shi, Tianling; Ding, Feng; Wang, Fei; Ge, Zhen; Zhang, Lijun
53

Research on Key Technology Points for MMC-HVDC System

Autoren: Zhao, Rui; Song, Gaosheng
54

Compact and Reliable Isolated DC/DC and SiC Gate Driver for Automotive Application

Autoren: Chen, Baoxing
55

Efficiency and Robustness Analysis of a Novel SiGe Diode Utilized in a High Frequency 48 V/12V DC/DC Converter

Autoren: Aneissi, Ali; Meissner, Michael; Kloetzer, Sebastian; Hoffmann, Klaus F.; Behtash, Reza; Fahlbusch, Sebastian; Fischer, Jan
56

GaN, SiC or Silicon Mosfet – A Comparison Based On Power Loss Calculations

Autoren: Rai, Shishir
57

Discussion of Junction Capacitance of SiC Schottky Diode on Soft-Switching Condition of LLC Resonant Converter with Cockcroft-Walton Voltage Multiplier for High-Voltage Generator

Autoren: Wang, Runze; Yin, Shan; Xin, Xiong; Dong, Minghai; Li, Hui
58

SiC Power Device Hammer and Burn-In System

Autoren: Ye, Zhong; Yang, Hailong; Wang, Zhenye