Robust buffer layer of 650 V Super-junction MOSFET
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Kang, Soohyun; Lee, Geunhyoung; Jung, Junhee; Kang, Youngjin; Ko, MK (ON Semiconductor, Republic of Korea)
Inhalt:
Buffer layer of 650V Super-junction MOSFET is studied for High Temperature Reverse Bias (HTRB) improvement. The quasi-stationary avalanche simulation and experimental results provide the buffer design has a key role to avoid catastrophic failure during HTRB test.