An integrated servo motor drive with self-cooling design using SiC MOSFETs
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Wang, Heng (Infineon Integrated Circuit (Beijing) Co., Ltd., Beijing, China)
Su, Jianzhong (JingChuan Electronic Technology Development Co., Ltd, Beijing, China)
Du, Jiaxing; Ye, Pan; Su, Zhisheng (Maxsine Electric Co., Ltd., Wuhan, China)
Inhalt:
This paper introduces a new integrated servo motor design that uses a SiC MOSFET instead of an IGBT as the core power device for the inverter. Compared to IGBTs, SiC MOSFETs have very low switching losses and low conduction losses. They can be located in the housing of the motor, and can achieve considerable power output via a selfcooling metal housing. A demonstrator was designed to verify the switching behavior and thermal performance in a laboratory, and an extreme acceleration and deceleration test was performed with a simulated inertia load. Finally, the paper summarizes the limitations of current integrated designs and methods for enhancing motor insulation in the future.