Switching speed controllable GaN FET

Inhalt:
This work introduces our latest combined GaN FET technology released to the market. Based on the advantages of a new structure design of the driving circuit integrated, the new device gets the benefits of high efficiency, high switching frequency and low EMI problem. These features make the device ideal fit for QR flyback topology, supporting the trend for compacted high power-density quick-charger and PD adapters. Index Terms—Cascode structure, gallium nitride (GaN) highelectron-mobility transistor (HEMT), Quasi-Resonant Flyback, EMI.