New 400 V SiC MOSFET technology delivering highest efficiency in three-level industrial drive applications

Inhalt:
With the introduction of the first commercially available 400 V SiC MOSFET technology, a longstanding gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs has been closed. Offering low switching losses and low on-state resistance, the technology is a perfect fit for 3-level (3L) topologies. This work briefly introduces the device concept, and studies the performance in a 3-level 3-phase AC driven general purpose industrial drive in ANPC configuration, working with up to 800 VDC blocking voltage.