Switching Loss Reduction for 3.3kV-750A Full-SiC MOSFET Module by Active Gate Driver

Inhalt:
3.3kV high-current SiC MOSFET module is promising for enhancing efficiency in railway traction and renewable power generation sectors. Although it features low switching loss, high-frequency operation can still accumulate significant loss, potentially damaging long-term reliability and lifetime of the module. The conventional method for switching loss suppression is through the decrement of gate resistance, resulting in serious overshoot. To address these issues, an active gate driver (AGD) is designed in this paper to reduce the switching loss without intensifying the overshoot. A mathematical model is established to elucidate the design methodology of AGD, and experiments validate the proposed method’s effectiveness.