The third generation SiC MOSFET with low on-state resistance and ultra-high reliability

Inhalt:
In this paper, we introduce the new generation of 1200V fine planar-gate SiC MOSFET,which has excellent low specific resistance of 2.7 milliohm*cm2 by adjusting the cell structure and low switching loss by optimizing the radio of Ciss/Cgd. Furthermore, the device has also demonstrated ultra-high reliability with narrower termination compared with last generation planar-gate SiC MOSFET, as shown by no failures after stressing at +23/-10V HTGB test for 1000 hours at 175 °Celsius or 1300V HTRB test for 1000 hours at 175 °Celsius.