New 650V SiC MOSFET for System Efficiency, EMI and Reliability

Inhalt:
The rapid growth of Artificial Intelligence (AI) is driving a significant demand for data centers, which has greatly increased energy demands and led to innovations in high-performance data center design. Today’s Server PSUs in development aim to meet the 80 Plus Titanium standard, requiring over 96% peak efficiency at half loads. While Si Super-junction (SJ) MOSFETs struggle to meet the Titanium specifications, 650V SiC MOSFETs enable inno-vative, high-performance PSU designs that further shrink footprints while challenging both thermal and electro-magnetic interference characteristics of power devices. 650V SiC MOSFETs, which have low RDS(ON), capaci-tances, and body diode recovery charge (QRR), are replacing SJ MOSFETs in advanced topologies such as Totem-pole PFC, and CLLC resonant topologies. This paper highlights key parameters of Power Master Semiconductor’s 650V e SiC M1 MOSFET and its benefits over planar and trench competitors' 650V eSiC MOSFETs.