Experimental Analysis of 2000 V Discrete CoolSiC(tm) MOSFETs in TO-2474 High Creepage Packages

Inhalt:
This paper presents the electrical performance of 2000 V discrete CoolSiC(tm) metal-oxide-semiconductor field-effect transistor (MOSFET) in a TO-247 4-pin, high-creepage package, installed on an evaluation board with half-bridge topology. The simulation is performed to show how the circuit's parasitic parameters and the snubber circuit influence the turn-on and turn-off behavior of the waveform. Based on the spice model of the device, this simulation was used to view and then verify the results that were obtained on the evaluation board. Finally, the optimal configuration that would reduce the turn-on and turn-off oscillation was determined.