CoolSiC(TM) 2000 V SiC Trench MOSFET defines an enhanced benchmark for increased power density in new energy applications
Konferenz: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.08.2024-30.08.2024 in Shenzhen, China
doi:10.30420/566414042
Tagungsband: PCIM Asia 2024
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Zhou, Ming; Hao, Xin
Inhalt:
This paper presents the new CoolSiC(TM) trench MOSFET 2000 V series. In the new TO-247PLUS-4-HCC package with .XT technology, these devices increase power density. In the 62mm package, they can be used as half-bridge modules and in an EasyPACK(TM) 3B package as boost modules for string inverters. The enhanced performance of these devices leads to higher power density, excellent reliability, higher efficiency, and ease of design.