New Developed 4.5KV/1.5KA IGBT Module based on TMOS IGBT and PIC FRD Technology
Konferenz: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.08.2024-30.08.2024 in Shenzhen, China
doi:10.30420/566414022
Tagungsband: PCIM Asia 2024
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Wang, Bin; Zhu, Liheng; Xu, Jiacheng; Chen, Xing; Wang, Mengjie; Lui, Pengfei; Qin, Rongzhen; Xiao, Qiang; Lou, Haihui
Inhalt:
In this paper, a new 4500V/1500A IGBT module based on TMOS IGBT and PIC FRD technology is proposed. Compared to the last generation module, the new module demonstrates a significant reduction in conduction saturation voltage, diode forward voltage and reverse recovery energy. Furthermore, the module enhanced short circuit and reverse blocking capability. The peak reverse recovery power reaches 18MW, featuring RRSOA robustness. The module has passed 150 degrees Celcius 1000 hours 3600V HTRB test, exhibiting long term reliability.