The Carriers-Redistribution Phenomenon on Short-Circuit Oscillations of IGBTs

Inhalt:
In this paper, the high-frequency short-circuit oscillations of IGBT are investigated. The short-circuit phenomenons of the 1.7-kV IGBT are simulated by TCAD. It is ound that the carriers-redistribution (CR) phenomenon occurs in some areas of the device during the short-circuit phase. The CR phenomenon will cause the local electric field and the local capacitance to mutate, resulting in the RLC resonance condition being satisfied, and further lead to the highfrequency short-circut oscillations of the device during the short-circuit phase.