New 15 V silicon trench MOSFET technology optimized for high frequency switching buck converters at low input voltages

Konferenz: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.08.2024-30.08.2024 in Shenzhen, China

doi:10.30420/566414011

Tagungsband: PCIM Asia 2024

Seiten: 3Sprache: EnglischTyp: PDF

Autoren:
Huang, Jasmine; Lee, Seung Hwan; Roesch, Maximilian; Gebhard, Thomas; Glantschnig, Alexander Josef

Inhalt:
Driven by emerging technologies such as AI, blockchain, 5G and virtual reality global servers, power consumption has increased by >250 % since 2017. In this context, a 48 V power distribution architecture has been proposed by leading tech companies. This also anticipates stricter environmental regulations and enables further capacity upscaling. Infineon's newly introduced 15 V trench power MOSFET plays a key role in converting the 48 V to a CPU/GPU supply voltage level thanks to significantly improved device characteristics. This paper presents benchmark results for the discrete MOSFET generations as well as for a fully integrated power stage operating up to 2 MHz.