Switching Performance Comparison of 3.3 kV SiC MOSFET and Si IGBT Power Modules for Railway Traction Systems

Inhalt:
This study provides an in-depth performance comparison between the latest 3.3 kV SiC MOSFET and Si IGBT power modules, particularly focusing on their switching characteristics. Encased in a standard 100 mm x 140 mm package, the SiC MOSFET module demonstrates superior switching speed, reduced losses, and outstanding high-temperature performance. Through rigorous experimental analysis, we offer substantial evidence advocating for SiC MOSFETs' superior suitability over Si IGBTs in railway traction systems. Both active and reactive power tests on a three-phase traction inverter substantiate SiC MOSFETs' effectiveness and efficiency at the system level.