A Behavioral Transient Model for IGBT Device with Anti Parallel Freewheeling Diode

Inhalt:
This paper presents a comprehensive behavioral model for Nexperia’s new Insulated Gate Bipolar Transistor (IGBT) products, which is specifically designed for SPICE simulation. The model is constructed upon the classical “Mosfet + PNP transistor” framework for the IGBT and incorporates subcircuits to capture characteristics related to parasitic capacitances, di/dt and dv/dt adjustment, tail current and diode reverse recovery, as well as junction temperature simulation. Calibrated using datasheet information, the model not only achieves high accuracy for device fundamental characteristics but also operates with a fast simulation speed, enabling accurate topology-level simulation analysis. The detailed model structure and calibration guidelines are introduced in the paper. The proposed model and methodology can be extended to any IGBT device.