Thermal Behavior of SiC MOSFET with Planar Packaging Technology

Inhalt:
This paper discusses the thermal characteristics of SiC MOSFET power modules using different planar packaging concepts. The thermal performance is validated both with thermal impedance measurements and transient thermal simulations. Finally, the results are compared with a standard TO-247-4 package. Simulation and experimental findings demonstrate that planar packaging technology significantly enhances both transient and steady-state thermal performance, leading to a reduced junction temperature for SiC MOSFETs both in regular inverter application, in overload situations and especially during surge current events.