Junction Temperature Measurement of a 3.3 kV Silicon Carbide MOSFET Power Module

Inhalt:
The static temperature distribution in a 3.3 kV SiC MOSFET power module with several parallel chips depending on power loss is examined using an infrared temperature camera. Moreover, the dynamic infrared temperature curves are compared with the junction temperature measurement based on the internal gate resistance and forward voltage of the body diode as temperature-sensitive electrical parameters. The thermal impedance measurements with these three different temperature sensors are compared. Moreover, the influence of different chip temperatures on lifetime simulation is investigated.