Behavior Modelling the Short Circuit Characteristics of SiC MOSFETs using Compact Models

Inhalt:
An electro-thermal compact model of SiC MOSFETs, capable of accurately estimating short circuit behavior of SiC MOSFETs, is presented in this paper. The model has been validated for standard static and dynamic characteristics under different temperatures, and calibrated through high-voltage I-V output measurements to ensure that the drain-current in the saturation region is depicted accurately. Thanks to an extended thermal impedance network, the simulation results show an excellent agreement with the non-destructive short circuit measurements over a wide range of gate voltages and short-circuit pulse time. The accurate estimation of short circuit power, turn-off overvoltage, and critical temperature provides beneficial information for assessing reliability and analyzing the fault mode in virtual prototyping. Ultimately, these models can help electrical engineers protect power electronic systems by detecting short circuit events precisely.