Assessment of the Rds,on of SiC MOSFET Dies Through Kelvin Wire Connection

Inhalt:
The market for silicon-carbide modules has seen phenomenal growth in recent years and is expected to grow further. Tier 1 suppliers and OEMs are expanding into the market to develop their own modules to reduce costs. As a result, the market for bare-die SiC MOSFET bare dies is expected to witness significant growth. Correctly assessing the performance of the die, therefore, is of utmost importance for the producer and the module manufacturer. This paper compares and reviews the measurement process for singulated die measurements of the R (ds,on) and the characterization of packaged dies to outline the limitations when using a packaged die to assess the performance of a bare die. Finally, the method of using the Kelvin pin to assess the on-state resistance is introduced and the fidelity of this method is investigated. Finite-element simulations are provided to support this investigation showing the significant influence from the packaging on the R (ds,on).