A New 2.3 kV Rated SiC MOSFET Module with Low-Inductance High-Power Package HPnC for 1500 VDC Applications

Inhalt:
An optimum combination of the newly developed 2.3 kV rated SiC MOSFET and the high power package: High Power next Core (HPnC) is introduced in this paper. The 2.3 kV SiC MOSFET module is designed for 1500 VDC applications and its excellent characteristics enables 2-level topology instead of 3-level NPC topology for the systems. In addition, the newly developed HPnC package, featured low-inductive inside structure, is suitable for fast switching devices represented by SiC MOSFET, and maximizes its performance. The simulation result of power losses in a 1500 VDC inverter with the 2.3 kV SiC MOSFET HPnC modules was 38% smaller than that of a conventional 3-level NPC with 1.2 kV Si IGBT modules, and the total footprint of the power modules was reduced by 68%. This result indicates that the developed module can realize a cost-effective power converter for 1500 VDC applications.