Performance Evaluation of CoolSiC CoolSiC(TM) 2 kV SiC MOSFET Discrete in 1500 V DC Link Systems

Inhalt:
Higher DC link voltage voltage, particularly 1500 VDC, is becoming popular for use in industrial applications such as energy storage systems and photovoltaic systems. Higher DC link voltage enables higher power levels while simultaneously reducing system losses. However, to achievachieve higher DC link voltage levels with the existing device technologies technologies, multimulti-level converter topologies are required. This makes the systems complex. InfineonInfineon’s new 2 kV discrete CoolSiC(TM) MOSFET presents an opportunity for the development of more efficient and simplified designs. This paper evaluates the performance of a simplified topology with the 2 kV CoolSiC (TM) MOSFET, comparing it with an alternative system employing 1200 V SiC devices to achieve a 1500 V DC link voltage. The simulations demonstrated that integrating the 2 kV CoolSiC(TM) MOSFET leads to improved performance of a simplified system with reduced component count and light weight design. The measurement data also validatevalidated th e simulation outcomes, confirming the effectiveness of the 2 kV CoolSiC(TM) MOSFET.