Impact of Gate Control on the Switching Performance of 3.3kV SBD-Embedded SiC-MOSFET
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262281
Tagungsband: PCIM Europe 2024
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Sakai, Junya; He, Daniel; Yamamoto, Shota; Tsuda, Ryo; Hatori, Kenji; Soltau, Nils
Inhalt:
This paper presents the voltage gradient dv/dt when switching a 3.3 kV Schottky barrier diode (SBD) embedded silicon carbide (SiC) MOSFET module rated for 800 A. Different measurements are performed to identify the influences of temperature, dc-link voltage, stray inductance, gate drive conditions and drain current value on dv/dt. Finally, the controllability of voltage transients and the impact on switching losses are analyzed.