New 2 kV SiC-MOS Technology for Application Fields in the Industrial Landscape

Inhalt:
A new 2 kV SiC-MOSFET based on ROHMs 4th generation trench cell has been developed to support the growing requirements of renewable energy applications driven by the photovoltaic sector. The longevity of solar panels, the search for higher efficiencies and the range of conditions that outdoor-mounted converters must withstand impose tough requirements on converter manufacturers and module makers alike, which in turn require semiconductor devices up to the task. Results show that this device presents excellent reliability and humidity robustness characteristics while portraying the low loss characteristics proper of ROHMs 4th gen trench technology, enabling simpler two-level topologies with 1500 V DC-Links.