Realtime Junction Temperature Estimation in SiC Power Modules Based on Multiple TSEP Acquisition

Inhalt:
Accurate junction temperature estimation is crucial for optimizing SiC power module performance and reliability. Temperature-sensitive electrical parameters (TSEPs) can be used to implicitly determine the junction temperature. In this work, a novel acquisition concept based on four TSEPs is proposed, using the intrinsic parasitic inductance between the power source and Kelvin source terminals to acquire the virtual threshold voltage and the virtual time delay during the turn-on and turn-off transitions. Experimental results reveal maximum errors in temperature estimation of ±10 K, offering a promising non-invasive real-time junction temperature estimation solution for SiC power modules.