Power Cycling Capability of Discrete SiC MOSFET Devices with Different Designs

Inhalt:
The purpose of this paper is to evaluate the power cycling capability of the commercial discrete SiC MOSFET devices as there are many differences in the designs. Six groups of PCT(Power Cycling Test) with the 1200V discrete SiC MOSFETs from six different manufacturers are carried out under the same test conditions. The power cycling lifetime data show that the chip area and the rated current have a significant influence on the lifetime, while that of other design parameters is small. As the chip area and the rated current decide the power density, the conclusion is obtained that the power density is the key factor that impacts the power cycling capability of discrete SiC MOSFET devices.