Quantitative Performance Comparison of Large-Format SiC MOSFET and Si IGBT Modules

Inhalt:
In this article, the most recent 1.7 kV SiC MOSFET and Si IGBT large-format modules (high current ratings, 900 to 1000 A) are compared, focusing on their dynamic characteristics. First, the losses and overvoltage characteristics are analyzed using the same Double-Pulse Test platform and the same external gate resistance. The limitations of this study are discussed, and a second comparison is proposed. This second comparison involves normalizing the total gate resistance of each module, including the internal gate resistance. This method leads to narrower differences between modules, although significant variation is still observed.