A Dynamic Current Balancing Method Using Full-Coupled Inductors in Paralleled Gate Branches

Inhalt:
Dynamic currents between paralleled SiC MOSFETs have to be balanced to extend the device's lifetime. Inserting driving-loop full-coupled inductors is a promising method with low volumes, but cannot reduce the current difference caused by unbalanced parasitic power-driving mutual inductances. To address the problem, this paper presents a method with full-coupled inductors in the paralleled gate branches, which can simultaneously reduce the unbalanced dynamic currents under unbalanced parasitic power inductances and power-driving mutual inductances. The experimental results show a 90.3 % turn-on current difference reduction compared to the non-optimized circuit, and a 71.5 % reduction compared to the existing method.