An Advanced Multi-Aspect Performance Analysis of Planar-Gate 1.2 kV SiC Power MOSFETs

Inhalt:
This paper introduces a parameterized SiC power MOSFET model enabling to find optimal design solutions by solving 2-D numerical device simulations. Namely, it allows exploring the design space of hundreds of MOSFET designs while accounting for electro-thermal and dynamic effects to evaluate the application-relevant device figure-of-merits (FOM). The analysis of a large MOSFET design space shows that short-circuit (SC) ruggedness of planar-gate SiC power MOSFETs featuring the same SC peak current is defined by the saturation current at high temperatures beyond 175 °C, which is then directly correlated to the temperature-dependent on-state resistances. Furthermore, a comprehensive analysis of different MOSFET designs points to the impact of circuit layout parasitics on the dynamic device performance.