Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications

Inhalt:
The industry’s first, true 1250 V-rated lateral GaN HEMT allows significant transient overvoltage capability making it ideal for high-voltage, high-reliability EV and industrial applications. Based on the PowiGaN (TM) technology platform of Power Integrations, the 1250 V GaN cascode device shows stable off-state leakage beyond 2000 V with a typical breakdown voltage of 2300 V. Reliability qualification data is presented confirming the advantage of the 1250 V device for such applications. In this work, we have also demonstrated high-efficiency power supply operation at high-input voltages using a 1250 V flyback switcher IC, confirming its readiness for real-world use.