Comparison of Switching Losses and Dynamic On Resistance of 600 V-Class GaN HEMTs

Inhalt:
Semiconductor devices based on GaN promise lower switching losses and thus enable higher switching frequencies and higher power densities. However, measuring the switching losses is challenging due to the fast switching transients and places high demands on the sensor technology. In this paper, a high-bandwidth and low-inductance current shunt is used to evaluate and compare switching losses of five GaN devices and one SiC MOSFET as a benchmark. Furthermore, the dynamic on resistance of the semiconductors is measured and compared. By measuring all semiconductor devices with an identical measurement setup, a neutral comparison of the different power switches is achieved.