Parallel Connection of GaN FETs: an Experimental Investigation Approach

Inhalt:
The paper investigates the parallel connection of the GaN FETs in inverters for low-voltage motor control applications. Several simulation results and experimental tests show the main device parameters and layout constraints involved in the effectiveness of parallel connection arrangement. A dedicated measurement board setup has been developed for the experimental evaluation. The experimental tests enable the empirical prediction of the application’s maximum phase load current amplitude, considering the effects of the spread of the parameters among the parallel-connected GaN FETs. Furthermore, an inverter board with four devices in parallel is designed and assembled to validate the advanced GaN FETs parallel operation in an actual application, increasing the output phase current value for high-current motor drive applications.