Fast EME Characterization of Bare Die SiC-MOSFETs
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262190
Tagungsband: PCIM Europe 2024
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Juelich, Frederik; Kragl, Robert; Oberdieck, Karl; Spanos, Konstantin; De Doncker, Rik W.
Inhalt:
This paper introduces a test setup to characterize the electromagnetic emissions (EMEs) of bare-die SiC MOSFETs. In the current design process of power electronics, the EME is solely measured in the product validation phase of the converter during electromagnetic compatibility (EMC) tests (CISPR-25). By measuring the EME of bare dies, the introduced setup enables an EME optimization of SiC MOSFETs during prototyping in the frequency range of 20MHz to 150MHz. Besides the introduction and the validation of the developed test setup, this paper shows measurement results of the EME noise spectra of two different SiC MOSFET prototypes. A clear difference can be detected in the two spectra, identifying the superior EME behavior of one prototype.