Design of a Traction Inverter Based on PCB-Embedded GaN Devices

Inhalt:
This paper summarizes the design of a highly integrated power stage for a traction inverter based on PCBembedded GaN transistors, compatible with Hybrid-PACK Drive power modules from Infineon. Starting from the modeling of the transistors to estimate the power losses, the requirements to properly manage heat dissipation are derived and are translated in specifications to guide the design, the PCB stack-up, and the layout. Special care has been devoted to the gate driving circuitry, integrating several solutions to evaluate GaN transistors and at the same time comparing the behavior of commercial core-less hall-effect current sensors with more standard hall-effect devices.