PCB Only Thermal Management Techniques for eGAN® FETs in a Half-Bridge Configuration.
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262134
Tagungsband: PCIM Europe 2024
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Herrera, Adolfo R.; Arribas, Alejandro Pozo; de Rooij, Michael A.
Inhalt:
Cost constraints for low power GaN FET based converters limit the use of heatsink options for cooling, thus requiring the Printed Circuit Boards (PCB) to become the primary path for heat flux exchange. Various design options to minimize thermal resistance between the junction of a GaN FET and ambient are analyzed. Options include thicker copper, thermal vias to utilize the bottom-side copper for cooling, FET separation, and layout design to maximize heat-spreading are investigated. Proper implementation of these techniques can reduce thermal resistance from the junction to ambient (R(thetaJA)) by up to 30% with little to no additional cost.