6.5 kV Innovative Silicon Power Device (i-Si) Module with High Power Density and Low Loss by Stored Carrier Control
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262125
Tagungsband: PCIM Europe 2024
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Hirao, Takashi; Miyoshi, Tomoyuki; Suzuki, Hiroshi; Takada, Yusuke; Furukawa, Tomoyasu; Moritsuka, Tsubasa; Shiraishi, Masaki; Yoshida, Isamu; Kushima, Takayuki; Kanno, Yusuke; Kono, Yasuhiko; Ishikawa, Katsumi; Mori, Mutsuhiro
Inhalt:
This paper describes a demonstration of the low loss performance of a 6.5 kV innovative silicon power device (i-Si) module. The i-Si module uses stored carrier control to both the switching device and free wheel diode, which is made entirely from silicon. A 6.5 kV 800 A i-Si module was fabricated at a size of 130 mm × 140 mm. Despite having a package size 2/3 that of a conventional 6.5 kV 750 A IGBT, the fabricated i-Si module has 40% lower loss, similar to that of SiC MOSFETs.