Characterization of Power-Module Parasitics: Sub-Nanosecond Large Signal Pulsing vs. Double-Pulse Testing

Inhalt:
This paper compares the novel sensor gap transmission line pulsing (sgTLP) technique with the established method of double-pulse testing (DPT) for characterizing parasitic inductances in a fast SiC halfbridge power module. SgTLP employs Transmission Line Pulsing with its sub-nanosecond temporal resolution and voltages up to 2 kV to detect parasitic inductances and capacitive effects, which are not typically observable with DPT. While both, sgTLP and established methods, produce corresponding results for the total inductances, sgTLP additionally offers a deeper insight into the structure of the module’s internal inductive and even capacitive network.