Benefits of .XT Interconnection Technology for 3.3 kV XHP 2 Module with 3.3 kV CoolSiC MOSFET

Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany

doi:10.30420/566262106

Tagungsband: PCIM Europe 2024

Seiten: 7Sprache: EnglischTyp: PDF

Autoren:
Buerger, Matthias; Wassermann, Tobias N.; Foester, Henry

Inhalt:
CoolSiCTM MOSFETs enable operation at higher frequencies for high-voltage applications in the 3.3 kV voltage class. Equipped with CoolSiC(TM) MOSFETs, the Infineon 3.3 kV XHP(TM) 2 module enables high power densities in applications such as traction. With the trend towards higher power densities, robustness against failure such as surge current and short circuits is becoming increasingly important. Furthermore, traction applications demand high power cycling capabilities to ensure an ample service life of the power module. Combined with the Infineon .XT interconnect technology in an XHP(TM) 2 package, CoolSiC(TM) MOSFETs can address these requirements for traction applications. This paper describes the performance of the XHP(TM) 2 3.3 kV CoolSiC(TM) MOSFET .XT module with regard to surge current, short circuit, and power cycling.