The Design of a 2kV 1700A SiC MOSFET Dual Module

Inhalt:
In this paper we review some aspects of modern high power module design. We focus on the electrical design methodology applied to develop a multi-chip module built using 2kV silicon carbide (SiC) MOSFETs to reach an astounding 1700A rating. Switching waveforms of the module in its full safe operating area are shown validating the design. The challenges that had to be overcome included current balancing across 28 chips in parallel at each of the two topological switches in the module, and the elimination of high frequency internal ringing across different groups of chips. For this purpose, advanced full time and frequency domain simulation models were used.