Evaluation of Active Gate Drivers with Switchable Gate Resistors and Intermediate Voltage Levels for SiC MOSFETs in WLTC

Inhalt:
This paper explores the impact of employing an intermediate gate voltage level in an active gate driver on the performance of a SiC MOSFET inverter during the Worldwide Harmonized Light Vehicles Test Cycle (WLTC) class 3. It evaluates the effectiveness of this gate driving approach compared to a gate driving method employing switchable gate resistors. The study includes detailed loss calculations that are substantiated through experimental verification using an H-bridge in continuous operation mode.