An Accelerated Dynamic Gate Switching Stress Test Concept for SiC MOSFETs at High Drain Drain-Source Voltage (HV HV-GSS)
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262089
Tagungsband: PCIM Europe 2024
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Herrmann, Clemens; Thiele, Sven; Yang, Dezhi; Basler, Thomas; Neumeister, Matthias; Pfeifer, Markus
Inhalt:
This paper presents a test concept for a dynamic gate stress test under high drain-source voltage and high acceleration via switching frequency (HV-GSS). Gate-switching stress tests with and without drain voltage (HV-GSS and GSS) were conducted using SiC trench MOSFETs in order to determine the in-fluence of high drain-source voltage on gate reliability in terms of gate-switching instability.