Dead Time Optimization for High-Power SiC MOSFET Module in Consideration of Parasitic Components

Inhalt:
The parasitic components influence the gate voltage of the high power SiC MOSFET module significantly during di/dt and dv/dt phases of the switching transients. In some particular situations, a decrease in dead time can potentially introduce unexpected turn-on and reverse-recovery behaviors. This paper investigates the change of dead time under various operating conditions and their effects on the turn-on, reverse-recovery losses and reverse-recovery oscillation. From this perspective, the author recommends an optimization method for dead time that takes into consideration the influence of parasitic components.