Comparison of Si IGBT, SiC MOSFET and Adjustable Hybrid Switch PV Inverters for Different Geographical Locations

Inhalt:
This paper compares a three-level three-phase SiC MOSFET and Adjustable Hybrid Switch (AHS) photovoltaic (PV) inverter to a commercially available Si IGBT PV inverter. The comparison extends beyond mere peak efficiency values to include the profitability aspect of adopting novel semiconductor technologies over conventional Si IGBTs. The study analyzes the performance of different PV inverters based on solar conditions and local electricity prices in a region. This research helps choose the right transistor configuration for specific application sites while highlighting a tradeoff between energy and profit gains. It demonstrates that solar irradiation profile, upfront costs and operating income are crucial factors for the widespread adoption of SiC technology.