Novel 200 V MOSFET Technology Pushes Motor Drive Inverter Efficiency to an Unprecedented Level

Inhalt:
This work introduces the latest 200 V trench MOSFET technology released to the market. Based on the advantages of 3D charge compensation, the new cell design combines the benefits of low conduction and switching losses with good ruggedness, excellent body diode properties and an extremely tight threshold voltage spread. These features result in a well-balanced all-round performer that will bring significant improvements to a broad range of target applications. They also make the devices an ideal fit especially for high power motor-drive applications, which require an easy paralleling of many devices. The presented results focus on the use of the new devices in such applications.