4.5 kV Double-Gate Reverse-Conducting Press-Pack IEGT
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262067
Tagungsband: PCIM Europe 2024
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Yoshida, Satoshi; Sakano, Tatsunori; Gejo, Ryohei; Kato, Takahiro; Yamaoka, Atsushi; Inokuchi, Tomoaki; Takao, Kazuto
Inhalt:
A 4.5 kV double-gate (DG) reverse-conducting (RC) press-pack (PP) injection-enhanced gate transistor (IEGT) was developed. The DG-RC-PPI (PP-IEGT is abbreviated as PPI) was designed to control two kinds of gates in a DG-RC-IEGT device without chip-to-chip imbalance or interference between the gates. The fabricated DG-RC-PPI was examined under a switching condition of VCE=2800 V, IC=2100 A. By applying gate control, turn-off switching loss and reverse-recovery loss were reduced by 30% and 18%, respectively. As a result, we succeeded in reducing total switching loss by 16% compared with a conventional single-gate PPI.