Design of High High-Power Inverter with 12 Parallel GaN Devices
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262019
Tagungsband: PCIM Europe 2024
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Sawada, Takashi; Takuma, Shunsuke; Onuma, Yoshiya; Takagi, Kenichi; Tadano, Hiroshi; Shiozaki, Koji
Inhalt:
Parallel placement and current imbalance are widely discussed in the application of GaN devices to high-power inverters. This paper describes a circuit layout that reduces the parasitic component of the printed circuit board by mounting GaN devices in 12 parallel in a three-phase inverter circuit. The current imbalance in the multi-pulse test is less than 20% at 600 A current output.